Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers

作者：Wang W; Hu C; Li S Y; Li F N; Liu Z C; Wang F; Fu J; Wang H X^*

来源：Journal of Nanomaterials, 2015, 2015: 124640.

DOI：10.1155/2015/124640

Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 x 10(13) cm(-2) and 24.4 cm(2).V-1.s(-1), respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N. High voltage up to -200V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

• 出版日期2015
• 单位西安交通大学