科研之友
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摘要
Accurately illustrating the photocarrier dynamics and photoelectrical properties of two dimensional (2D) materials is crucial in the development of 2D material-based optoelectronic devices. Considering this requirement, terahertz (THz) spectroscopy has emerged as a befitting characterization tool to provide deep insights into the carrier dynamics and measurements of the electrical/photoelectrical conductivity of 2D materials. THz spectroscopic measurements would provide information of transient behaviors of carriers with high accuracy in a nondestructive and noncontact manner. In this article, we present a comprehensive review on recent research efforts on investigations of 2D materials of graphene and transition metal dichalcogenides (TMDs) using THz spectroscopy. A brief introduction of THz time-domain spectroscopy (THz-TDS) and optical pump-THz probe spectroscopy (OPTP) is provided. The characterization of the electron transport of graphene at equilibrium state and transient behavior at non-equilibrium state is reviewed. We also review the characterizations of TMDs including MoS2 and WSe2. Finally, we conclude the recent reports and give a prospect on how THz characterizations would guide the design and optimization of 2D material-based optoelectronic devices.
