Design of 6-18-GHz High-Power Amplifier in GaAs pHEMT Technology

作者：Meghdadi Masoud^*; Medi Ali

来源：IEEE Transactions on Microwave Theory and Techniques, 2017, 65(7): 2353-2360.

DOI：10.1109/TMTT.2017.2680431

• GaAs
• impedance matching
• monolithic microwave integrated circuit
• power amplifier (PA)
• power combiner
• wideband amplifiers

This paper presents a design procedure for a wide-band 6-18-GHz monolithic microwave integrated circuit high-power amplifier (HPA) in 0.25-mu m AlGaAs-InGaAs pHEMT technology. The design is mainly focused on the realization of the passive circuits to provide the required low-loss and wideband impedance transformation networks. The two-stage GaAs HPA achieves an average output power of 39.6 dBm and a peak output power of 40.5 dBm at 11 GHz, in pulsed mode operation, with a small-signal gain of S-21 > 10 dB over the entire bandwidth. The average power added efficiency (PAE) is 22%, with a peak PAE of 29% at 11 GHz. The HPA chip occupies an area of 5x3.6 mm(2). The achieved output power and the corresponding power density of 0.51 W/mm(2) are amongst the highest reported values in wideband GaAs HPAs.

• 出版日期2017-7