Bistable resistive states of amorphous SrRuO(3) thin films

作者：Son J Y; Shin Y H; Parka C S^*

来源：Applied Physics Letters, 2008, 92(13): 133510.

DOI：10.1063/1.2897306

We fabricated amorphous SrRuO(3) thin films which exhibited the electronic transport behavior of an insulator that showed a three-dimensional hopping transport. Depending on the polarity of a sweep bias, bistable resistive states were observed in the capacitor consisted of an amorphous SrRuO(3) thin film and Pt electrodes, which gives the opportunity for nonvolatile memory applications. From electric transport and optical conductivity data, we indirectly confirmed a probability of the mixed phase of SrO and RuO(2) in the amorphous SrRuO(3) thin film. This supports the applicability of a filament model as a mechanism for the bistable resistive states.

• 出版日期2008-3-31