Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

作者：Kuo Cheng Huang^*; Fu Yi Keng; Chang L C; Chen Yu An

来源：IEEE Journal of Quantum Electronics, 2014, 50(4): 255-260.

DOI：10.1109/JQE.2014.2306997

• InN/GaN
• efficiency droop
• In rich
• localization effect

Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm(2), the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.

• 出版日期2014-4