Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211-1285 nm

作者：Jelmakas E; Tomasiunas R^*; Vengris M; Rafailov E; Krestnikov I

来源：Optical Materials, 2013, 35(12): 2171-2174.

DOI：10.1016/j.optmat.2013.05.042

• Quantum dot
• InGaAs
• Waveguide
• Semiconductor optical amplifier
• Absorption bleaching

We report on photoinduced absorption bleaching of InAs/InGaAs chirped quantum dot semiconductor optical amplifier (QD SOA) waveguide devices investigated by the traditional femtosecond pump probe technique applied for a waveguide configuration. To gain broader spectra for the device a chirped QD structure including three groups of quantum dots each dedicated to a ground state transition at wavelength 1285, 1243 and 1211 nm was designed. Photoinduced transmission spectra consisting of ground state transition for the groups of QD%26apos;s involved showed coincidence with the electroluminescence spectra and even more exceeded to longer wavelength. From photoinduced transmission kinetics absorption recovery in the range of picoseconds was considered. For comparison a device with typical high photoinduced absorption demonstrating large suppression of absorption bleaching was shown and interpreted.

• 出版日期2013-10