Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

作者：Liu Z W^*; Yeo S W; Ong C K

来源：Journal of Materials Research, 2007, 22(10): 2668-2675.

DOI：10.1557/JMR.2007.0364

N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both nand p-type conductions were obtained in these ZnO:N and ZnO:AI:N films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400-600 degrees C for 10-60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 10(21)-10(22) cm(-3). After conversion to ZnO, the n-type films had a carrier concentrations up to 10(19) cm(-3), whereas the p-type ZnO:N films had hole concentrations of 10(14)-10(16) cm(-3). (Al,N)-codoping increased the hole concentration of p-type film to 10(18) cm(-3) despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N-2 as the N source.

• 出版日期2007-10