Anisotropic pressure effect on the electrical resistivity of CeRu2Al10

作者：Tanida H^*; Nonaka Y; Tanaka D; Sera M; Nishioka T; Matsumura M

来源：Physical Review B, 2012, 86(8): 085144.

DOI：10.1103/PhysRevB.86.085144

We performed the detailed studies of the pressure effect on the anisotropic electrical resistivity (rho) ofCeRu(2)Al(10) in order to clarify if the pressure effect is also anisotropic or not. The results clearly showed the large anisotropic pressure effect on rho. By applying the pressure, the large peak of rho along the c axis below the antiferromagnetic transition temperature (T-0) is rapidly suppressed, and becomes small and similar to the large peak along the a axis where the peak is already small at the ambient pressure. On the other hand, that along the b axis at the ambient pressure is enhanced up to 2 GPa. Also, in the temperature dependence of rho between T-0 and similar to 50 K, the similar anisotropic pressure effect is observed. Along the a and c axes, the semiconducting behavior is suppressed, but that along the b axis is enhanced by pressure. From these results, we concluded that the two-dimensional electronic nature of CeRu2Al10 is reinforced by pressure and becomes close to that of CeOs2Al10. The pressure effect of the magnetization along the a axis and the thermal expansion of CeRu2Al10 along the three crystal axes were also investigated. These results and the pressure effect on rho indicate that the anisotropic c-f hybridization effect is important to clarify the unusual long-range order in this system.

• 出版日期2012-8-27