Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

作者：Yuan Hao; Tang Xiaoyan; Song Qingwen^*; Zhang Yimen; Zhang Yuming; Yang Fei; Niu Yingxi

来源：Solid-State Electronics, 2015, 103: 83-89.

DOI：10.1016/j.sse.2014.10.004

• 4H-SiC
• Floating junction SBD
• Specific on-resistance
• Breakdown voltage
• Analytical model

The analytical models of on-resistance and reverse breakdown voltage for 4H-SiC floating junction SBD are presented with the analysis of the transport path of the carriers and electric field distribution in the drift region. The calculation results from the analytical models well agree with the simulation results. The effects of the key structure parameters on specific on-resistance and breakdown voltage are described respectively by analytical models. Moreover, the relationship between BFOM and parameters of floating junction are investigated. It is proved that the analytical models are more convenient for the design of the floating junction SBDs.

• 出版日期2015-1
• 单位西安电子科技大学