High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues

作者：Villalon Anthony^*; Le Royer Cyrille; Cristoloveanu Sorin; Casse Mickael; Cooper David; Mazurier Jerome; Previtali Bernard; Tabone Claude; Perreau Pierre; Hartmann Jean Michel; Scheiblin Pascal; Allain Fabienne; Andrieu Francois; Weber Olivier; Faynot Olivier

来源：IEEE Transactions on Electron Devices, 2013, 60(5): 1568-1574.

DOI：10.1109/TED.2013.2255055

• Access resistance
• dual-channel
• FDSOI
• mobility
• pMOSFET
• SiGe
• strain
• Vth variability

We report on ultrascaled (L-G = 23 nm) compressively strained SiGe-based FDSOI pMOSFET with ultrathin body. The devices have been fabricated using a high-K metal gate (TiN/HfSiON) process flow. SiGe channels (3.4 nm) have been epitaxially grown on 3-nm thick 300-mm SOI wafers and combined with embedded Si0.7Ge0.3(:B) raised source and drain (RSD) for Vth, p tuning and smart strain management. In-depth electrical characterizations point out the +120-mV Vth, p tuning, the excellent short-channel, and DIBL control (similar to SOI reference), and show for the first time extremely low variability for SiGe-based FD pMOSFETs. Furthermore, we investigate hole-transport properties as a function of gate length and temperature and demonstrate 60% R-access reduction with SiGe RSD and +330% mobility enhancement at 23-nm gate length with respect to 7-nm thick SOI reference.

• 出版日期2013-5