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摘要
Silicon carbonitride films are synthesized by plasma enhanced chemical vapor deposition from bis(trimethylsilyl)ethylamine and helium or ammonium mixtures. The structure of chemical bonds in the films is studied by X-ray photoelectron and IR spectroscopy. The data on the main types of bonds present in silicon carbonitride films deposited under different synthesis conditions are obtained. It is shown that the use of ammonia at a low deposition temperature provides the synthesis of films with a simultaneous formation of Si-C, Si-N, and C-N bonds. The main bonds in films obtained from a bis(trimethylsilyl)ethylamine and helium mixture are Si-C and Si-N. The chemical structure of films obtained at high synthesis temperatures is close to SiC (x) regardless of the type of the additional gas used.
- 出版日期2014-5
