Effects of oxygen deficiency in the sol-gel ZrOx film on the electrical properties of Au/ZrOx/n-type Si/In devices

作者:Chen Wei Chung; Lin Yow Jon*; Chen Ya Hui; Chang Hsing Cheng
来源:Semiconductor Science and Technology, 2010, 25(5): 055003.
DOI:10.1088/0268-1242/25/5/055003

摘要

The ZrOx permittivity and leakage currents through Au/ZrOx/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance-voltage characteristics is attributed to the formation of the intermediate ZrSixOy layer.

  • 出版日期2010-5