Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser

作者：Khan M Z M; Ng T K; Lee Chi Sen; Anjum D H; Cha D; Bhattacharya P; Ooi B S^*

来源：IEEE Photonics Journal, 2013, 5(4): 1501308.

DOI：10.1109/JPHOT.2013.2272781

• Semiconductor lasers
• semiconductor quantum dots
• quantum dash lasers
• self-assembled quantum dot
• inhomogeneous broadening

We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Perot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.

• 出版日期2013-8
• 单位KAUST