科研之友
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摘要
We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of similar to 14.7 mu W. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(lambda/n)(3), is a promising and efficient light source for silicon photonics.
- 出版日期2013-11-15
