Numerical simulation of unsaturated output current of amorphous-silicon thin-film transistors

作者：Liu, Yuan; Yao, Ruo-He^*; Li, Bin

来源：Journal of South China University of Technology(Natural Science Edition), 2009, 37(1): 15-18+33.

• Amorphous silicon thin film transistors
• Drain induced barrier lowering effects
• Drain-induced barrier lowering
• Hydrogenated amorphous silicon thin films
• Output characteristics
• Output current
• Semiconductor device simulation
• Space charge limited conduction

In order to overcome the unsaturated output current of hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs), the output characteristics of a-Si:H TFTs are numerically simulated by using the semiconductor device simulation software, and the generation mechanism of the unsaturated output current is discussed. Simulated results show that, in long-channel semiconductor devices, the conduction of bulk current changes into a space charge-limited mode due to the increase of drain-source voltage, which is the main reason for the unsaturated output current, and that, in short-channel semiconductor devices, the drain-induced barrier lowering effect should be meanwhile considered.

• 出版日期2009-1
• 单位华南理工大学