摘要

Silicon nanowires have been successfully synthesized via wurtz-like reaction, using silicon tetrachloride and sodium in the presence of Co/Ni catalyzer at 500 degrees C in this process the sodium was used as reductant and flux. Transmission electron microscopy (TEM) shows that the nanowire cluster is about 10 nm in diameter and length up to several microns, and well aligned along their longitude direction. High-resolution transmission electron microscopy (HRTEM) images demonstrates that as-synthesized nanowires interlayer spacing are around 0.31 nm, corresponding well to the (111) lattice parameter of diamond-like crystalline silicon. Based on the experimental results, the possible wurtz reaction mechanism of the silicon nanowires (SiNWs) has been properly proposed.