Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress

作者：Peng, Ling; Hu, Dongqing^*; Jia, Yunpeng; Wu, Yu; An, Pengzhen; Jia, Guo

来源：IEEE Transactions on Nuclear Science, 2017, 64(10): 2633-2638.

DOI：10.1109/TNS.2017.2744679

• gamma-ray
• high electric field stress (HEFS)
• rapid recovery
• vertical double-diffused MOSFETs (VDMOSFET)

High electric field stress (HEFS) and annealing effects on irradiated (by Co-60 gamma-ray) vertical double-diffused MOSFETs (VDMOSFETs) are investigated. The behaviors of the oxide-trapped charges and interface traps during the stress are measured by using a simplified midgap technique. Rapid recovery of the threshold voltage (V-th) for the irradiated VDMOSFET is observed under a positive high electric field stress (PHEFS). The results show that the densities of oxide-trapped charges and interface traps decreased more rapidly for the PHEFS than that for postirradiation annealing. Repeated irradiation results of PHEFS-recovered VDMOSFETs indicate the possibility of reusing the irradiated VDMOSFETs.

• 出版日期2017-10
• 单位北京工业大学