Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

作者：Kim Kyung Min^*; Jeong Woong Hee; Kim Dong Lim; Rim You Seung; Choi Yuri; Ryu Myung Kwan; Park Kyung Bae; Kim Hyun Jae

来源：IEEE Electron Device Letters, 2011, 32(9): 1242-1244.

DOI：10.1109/LED.2011.2160612

• Display device
• indium zinc oxide (IZO)
• low temperature
• solution process
• thin-film transistor (TFT)

In this letter, we proposed solution-processed AlInZnO (AIZO)/InZnO (IZO) dual-channel thin-film transistors to realize both proper switching behavior and competitive device performance at the low annealing temperature of 350 degrees C. A thin IZO layer provides a higher carrier concentration, thereby maximizing the charge accumulation and yielding high saturation mobility mu(sat), whereas a thick AIZO layer controls the charge conductance resulting in suitable threshold voltage V(th). We therefore obtain excellent device characteristics at 350 degrees C with mu(sat) of 1.57 cm(2)/V . s, V(th) of 1.28 V, an on/off ratio of similar to 1.4 x 10(7), and a subthreshold gate swing of 0.59 V/dec.

• 出版日期2011-9