Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection

作者：Chen Wen Yi^*; Rosenbaum Elyse; Ker Ming Dou

来源：IEEE Transactions on Device and Materials Reliability, 2012, 12(1): 10-14.

DOI：10.1109/TDMR.2011.2171487

• Charge device model (CDM)
• electrostatic discharge (ESD)
• silicon-controlled rectifier (SCR)

Diode-triggered silicon-controlled rectifiers(DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e. g., high speed or low power.

• 出版日期2012-3