Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2

作者:Kanjilal A*; Gemming S; Rebohle L; Muecklich A; Gemming T; Voelskow M; Skorupa W; Helm M
来源:Physical Review B, 2011, 83(11): 113302.
DOI:10.1103/PhysRevB.83.113302

摘要

Using scanning transmission electron microscopy and aberration-corrected high-resolution transmission electron microscopy the existence of Er around Ge nanocrystals (NCs) is established. In fact, Ge NCs with Er-rich graded interfaces are proposed experimentally and validated by theoretical modeling using a supercell structure that consists of compounds determined by x-ray diffraction. The local electronic structure of the proposed interface geometry is found to be in accordance with the hypothesis behind the inverse energy transfer process from the Er3+ to Ge related oxygen-deficiency centers.

  • 出版日期2011-3-8

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