摘要

New application of polyimide (PI) is introduced in this paper. PI film of 27 mu m is achieved, and the excellent thermal-isolation performance of the film is simulated by ANSYS. The surface of film is flat, which is suitable for the fabrication of other materials such as aluminum and silicon nitride. The PI film is used as thermal-isolation layer of uncooled a-Si thin film transistor infrared sensors in this research, and the fabrication process is greatly simplified.