Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

作者：Son Dang Ngoc; Duy Nguyen Van; Jung Sungwook; Yi Junsin^*

来源：Semiconductor Science and Technology, 2010, 25(8): 085003.

DOI：10.1088/0268-1242/25/8/085003

Nonvolatile memory (NVM) devices with a nitride-nitride-oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-kappa high-density N-rich SiN(x) films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than +/- 9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application.

• 出版日期2010-8-2