Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors

作者：Vasek P^*; Svoboda P; Novak V; Cukr M; Vyborny Z; Jurka V; Stuchlik J; Orlita M; Maude D K

来源：Journal of Superconductivity and Novel Magnetism, 2010, 23(6): 1161-1163.

DOI：10.1007/s10948-010-0664-5

• GaMnAs
• Anisotropic magnetoresistance
• Hydrogenation

The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Different behavior of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of strain during treatment.

• 出版日期2010-8