Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

作者：Qian Kai; Tay Roland Yingjie; Lin Meng Fang; Chen Jingwei; Li Huakai; Lin Jinjun; Wang Jiangxin; Cai Guofa; Nguyen Viet Cuong; Teo Edwin Hang Tong; Chen Tupei; Lee Pooi See

来源：ACS Nano, 2017, 11(2): 1712-1718.

DOI：10.1021/acsnano.6b07577

• transparent and flexible memory
• transferable memory
• indium filament
• hexagonal boron nitride
• graphene
• ex situ TEM

Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (similar to 85% in the visible wavelength), ON/OFF ratio (similar to 480), retention time(similar to 5 Chi 10(4) s) but flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.

• 出版日期2017-2