Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias

作者：Li H; Chen T P; Chang C; Cheng H H^*; Chang Guo En; Hung K M

来源：Applied Physics Letters, 2016, 108(6): 063106.

DOI：10.1063/1.4941759

We report the electrical behaviour of heterostructure channels with spatially deformed wrinkle patterns at the edge. Instead of the linear current-voltage relationship, a diode-like current-voltage trace is observed under both forward and reverse bias. Analysing the position-dependent strain and energy levels of the wrinkled heterostructure shows that the energy minimum transforms from a two-dimensional plane at the heterointerface to a one-dimensional trajectory at the wrinkled edge characterized by a potential. When a voltage is applied, the carriers at the left and right electrodes travel through a one-dimensional potential, analogously to how carriers move across a potential in the p-n junction, resulting in diode-like electrical characteristics. This work represents a step forward in developing the wrinkled structure for electronic devices.

• 出版日期2016-2-8
• 单位中国科学院电工研究所