Accumulation of fluorine in CF4 plasma-treated AlGaN/GaN heterostructure interface: An experimental investigation

作者：Basu Anirban^*; Adesida Ilesanmi

来源：Journal of Applied Physics, 2009, 105(3): 033705.

DOI：10.1063/1.3074514

• aluminium compounds
• gallium compounds
• Hall effect
• III-V semiconductors
• plasma materials processing
• rapid thermal annealing
• secondary ion mass spectra
• semiconductor epitaxial layers
• semiconductor heterojunctions
• two-dimensional electron gas
• vacancies (crystal)
• wide band gap semiconductors

The impact of CF4 plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaN/GaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed.

• 出版日期2009-2-1