An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator

作者：Maricar Mohamed Ismaeel^*; Khalid Ata; Dunn Geoff; Greedy Steve; Thomas Dave; Cumming David R S; Oxley Chris H^*

来源：Microwave and Optical Technology Letters, 2018, 60(9): 2144-2148.

DOI：10.1002/mop.31312

• active channel length
• electrical equivalent circuit model
• GaAs
• impedance
• planar Gunn diode
• RF output power

The planar Gunn diode offers the potential of microwave, milli-metric and THz-based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 m and width of 120 m, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of -19 dBm for similar diodes.

• 出版日期2018-9