Annealing Pressure and Ambient Dependent RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure

作者:Kyaw Lwin Min*; Liu Yi; Lai Mei Ying; Bhat Thirumaleshwara N; Tan Hui Ru; Lim Poh Chong; Tripathy Sudhiranjan; Chor Eng Fong
来源:ECS Journal of Solid State Science and Technology, 2016, 5(2): Q17-Q23.
DOI:10.1149/2.0171602jss

摘要

We report the annealing pressure and ambient (vacuum at the pressure of 6.67 x 10(-3) Pa, N-2 and Ar at the pressure of 101.3 kPa) dependent electrical and material characteristics of RuOx Schottky contacts on InAlN/AlN/GaN-on-Si(111) heterostructures. With respect to RuOx Schottky contacts without annealing, those annealed in vacuum at 800 degrees C for 1 minute have similar to 0.208 eV reduced effective Schottky Barrier Height (SBH) and about one order of magnitude increased reverse leakage current. In contrast, RuOx Schottky contacts annealed in Ar have similar to 0.207 eV increased SBH and about 100 times reduced reverse leakage current decreases. RuOx Schottky contacts annealed in N-2 yields similar electrical andmaterial characteristics to those annealed in Ar(an inert ambient). This indicates that N-2 is unlikely to react with RuOx and the annealing pressure probably plays a critical role in changing the electrical and material characteristics of RuOx Schottky diodes.

  • 出版日期2016

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