A 1-MHz 5-kV Power Supply Applying SiC Diodes and GaN HEMT Cascode MOSFETs in Soft Switching

作者：Katzir Liran^*; Shmilovitz Doron

来源：IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016, 4(4): 1474-1482.

DOI：10.1109/JESTPE.2016.2603195

• Gallium-nitride high electron mobility transistor (GaN HEMT)
• MOSFET
• high voltage (HV)
• interleaving
• silicon carbide (SiC) diode

A new high-voltage (HV) power supply based on the half-wave Cockcroft-Walton voltage multiplier topology is introduced. The proposed power supply operates at 1 MHz (at least ten times faster than conventional HV multipliers) and exhibits a very stable output voltage with minimal ripple (<0.1%). The proposed power supply has a high power density due to the high frequency and is also highly efficient (>90%). The high operation frequency and efficiency were facilitated by a critical design that applies softly switched wide-bandgap devices (silicon carbide diodes and gallium nitride high electron mobility transistor cascode MOSFETS) in full bridge cascaded by a voltage multiplier topology. Experimental evidence is provided from a prototype unit that raises the voltage from 300 V to 5 kV, with a 93% efficiency.

• 出版日期2016-12