An analytical model of low field and high field electron mobility in wurtzite indium nitride

作者：Wang, Shulong; Liu, Hongxia^*; Chen, Qing; Zhang, Hailin

来源：Journal of Materials Science: Materials in Electronics , 2016, 27(11): 11353-11357.

DOI：10.1007/s10854-016-5259-x

• PHASE MATERIALS SYSTEM
• SEMICONDUCTORS
• TRANSPORT

This paper presents a theoretical analysis of transport properties and develops a low filed and high field electron analytical mobility model for wurtzite indium nitride (WZ InN) by Monte Carlo method. An nonparabolic electronic structure model was used in the ensemble Monte Carlo simulation, which includes all the major scattering mechanisms. The steady state velocity field curves and low field mobilities are calculated in detail as the functions of temperature, doping concentration and electric field. To avoid the effect of thermal motion at low field, the diffusion coefficient for InN is firstly obtained by autocorrelation function method, which is calculated by velocity fluctuation. The accurate low field mobility is deduced by Einstein equation. Finally, both the analytical low field and high field can be obtained by least squares fitting method, which can be employed in the simulation of InN devices.

• 出版日期2016-11
• 单位西安电子科技大学