摘要

Molecular dynamics simulation is applied in analyzing quantitatively the dynamic phase transformation of crystalline silicon under the dry and wet impact, respectively. At the impact loading stage, the phase transformation between fourfold silicon atoms and fivefold or threefold silicon atoms is affected only by the local pressure. The influence of the local temperature or the contact area on the phase transformation will emerge from the impact unloading stage. And the dynamic process of phase transformation between fourfold atoms and fivefold or threefold atoms will obey the Boltzmann distribution law by stages. The variance of the number of fivefold or fourfold atoms at impact loading stage is almost the same as the impact unloading stage. Furthermore, the dynamic residence time of fivefold or threefold atoms formed during the impact process will be about 250 fs. The half-life of these atoms is about 50 fs.