Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy

作者：Ueta Shunsaku^*; Horita Masahiro; Kimoto Tsunenobu; Suda Jun

来源：PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208(7): 1498-1500.

DOI：10.1002/pssa.201001033

• AlGaN
• light-emitting diodes
• molecular-beam epitaxy
• nonpolar

Crystalline orientation dependence of Ga incorporation in growth of high Al-content AlGaN was investigated Growth was carried out by molecular-beam epitaxy (MBE) using elemental Al, Ga, and if plasma excited nitrogen under various v/III ratios 6H-SIC (0001), 4H-SIC (1 (1) over bar 00) and 4H-SIC (11 (2) over bar0) were used as substrates. Ga incorporation increased with increase of v/III in the layers grown on (0001) planes. On the other hand, Ga was not incorporated in the layer grown on (11 (2) over bar0) plane even when the layer was grown under a nitrogen rich condition, indicating much lower Ga incorporation on (11 (2) over bar0) plane than those of other planes AlGaN with good quality was successfully grown on (1 (1) over bar 00) plane. Utilization of (1 (1) over bar 00) plane is suitable in MBL growth of AlGaN-based deep-ultraviolet light emitting devices.

• 出版日期2011-7