A Broadband Integrated Class-J Power Amplifier in GaAs pHEMT Technology

作者：Alizadeh Amirreza; Medi Ali^*

来源：IEEE Transactions on Microwave Theory and Techniques, 2016, 64(6): 1822-1830.

DOI：10.1109/TMTT.2016.2552167

• Class-J
• monolithic microwave integrated circuit (MMIC)
• pHEMT
• power amplifiers (PAs)
• wideband amplifiers

This paper presents a design methodology for class-J monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). Theoretical derivations of optimum load impedances, output power, efficiency, and maximum bandwidth are described in presence of nonlinear drain-source resistance of transistors (RDS). A procedure is developed for ideal transistor sizing where transistors are concurrently stabilized and sized to achieve the maximum power-added efficiency (PAE). A 3.5-7 GHz, 0.5-W class-J PA is implemented in a 0.1-mu m AlGaAs-InGaAs pHEMT technology to check the accuracy of the proposed approach. With chip dimensions of 1.57 x 1.29 mm(2), the PA achieves 56% average PAE over the frequency band while maintaining an average 11-dB small-signal gain.

• 出版日期2016-6