科研之友
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摘要
We report on the development of an optically-pumped vertical external-cavity surface-emitting laser emitting near 1120 nm using strain compensated quantum wells. The development is motivated by the need to achieve narrow linewidth emission at similar to 280 nm via fourth harmonic generation, which is required to cool Mg+ ions. The gain mirror had a top-emitting geometry, was grown by molecular beam epitaxy and comprised GaInAs/GaAs quantum wells strain compensated by GaAsP layers; the strain compensation was instrumental for achieving a dislocation free epitaxial structure without dark lines. We demonstrate VECSEL operation at a fundamental wavelength close to 1118 nm with a linewidth of less than 300 kHz. Using a lithium triborate crystal we achieved frequency doubling to similar to 559 nm with an output power of 1.1W.
- 出版日期2012-8-1
