A novel surface potential-based short channel MOSFET model for circuit simulation

作者：Jia Kan^*; Sun Weifeng; Shi Longxing

来源：Microelectronics Journal, 2011, 42(10): 1169-1175.

DOI：10.1016/j.mejo.2011.06.001

• Compact model
• MOSFET
• Surface potential-based
• Analytical approximation

In this paper a novel analytical approximation method for surface potential (psi(s)) calculation in compact MOSFET model is presented. It achieves excellent accuracy and good calculation speed over all regions from accumulation to strong inversion. With this approximation method, a surface potential-based compact model for short channel MOSFET is developed. Comparison with measured data is also presented to validate the new model.

• 出版日期2011-10
• 单位东南大学