Structural and electrical properties of chemical solution deposited (Bi0.9Tb0.1)(Fe0.975TM0.025)O-3 +/-delta(TM=Ni, Mn and Ti) thin films

作者：Raghavan C M; Kim J W; Kim S S^*

来源：Journal of Sol-Gel Science and Technology, 2013, 66(1): 168-174.

DOI：10.1007/s10971-013-2982-0

• BiFeO3
• Chemical solution deposition
• Electrical properties
• Hysteresis loops

Effects of Tb and transition metal (TM = Ni, Mn and Ti) ions co-doping on the structural, electrical and ferroelectric properties of the BiFeO3 thin films prepared by using a chemical solution deposition method were reported. From X-ray diffraction and Raman scattering analyses, distorted rhombohedral perovskite structures were observed for all thin films. Improved electrical and ferroelectric properties were observed for the co-doped thin films. Among the thin films, the lowest leakage current density of 2.67 x 10(-6) A/cm(2) (at 100 kV/cm), large remnant polarization (2P (r) ) of 82.

• 出版日期2013-4