摘要
The design and performance of a microwave plasma chemical vapor deposition (MPCVD) reactor based on compressed microwave waveguides and plate-to-plate substrate holders are described. This reactor can be operated at pressures from 10 to 40 kPa with microwave power of 0.4-1.2 kW, and a high plasma power density up to 500 W/cm(3) can be obtained. The single-crystal diamond (lower substrate holder) and polycrystalline diamond (upper substrate holder) have been grown by the plate-to-plate MPCVD reactor using high pressure CH4-H-2 mixture gases. Experimental results show that high quality single-crystal diamond and polycrystalline diamond were simultaneously synthesized at a growth rate of 25 mu m/h and 12 mu m/h, respectively. The results indicate that our MPCVD reactor is unique for the synthesis of diamond with high efficiency.
- 出版日期2016-6
- 单位武汉工程大学