An Improved Small-Signal Equivalent Circuit for GaN High-Electron Mobility Transistors

作者：Huang, F. Y.^*; Tang, X. S.; Wei, Z. N.; Zhang, L. H.; Jiang, N.

来源：IEEE Electron Device Letters, 2016, 37(11): 1399-1402.

DOI：10.1109/LED.2016.2609462

• HEMTs
• small-signal equivalent circuit
• intrinsic resistance and inductance
• GaN MMIC
• device modeling

We found that the extrinsic inductance shows a strong bias dependence in GaN high-electron mobility transistors (HEMTs) based on a conventional small-signal equivalent circuit, with a decreasing value as current increases. This abnormal behavior not only complicates the parameter extraction, but also indicates potential invalidity of formulations for the extrinsic inductance, leading to a parameter value of less physical meaning. By introducing a novel intrinsic resistance along with an inductance in the equivalent circuit, the bias dependence of extrinsic elements can be inhibited, and a high precision fit between simulation and measurement can be achieved for GaN HEMTs with a gate length of 0.1 mu m up to 65 GHz.

• 出版日期2016-11
• 单位东南大学