AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer

作者：Chang S J^*; Lee K H; Chang P C; Wang Y C; Kuo C H; Wu S L

来源：IEEE Sensors Journal, 2009, 9(1-2): 87-92.

DOI：10.1109/JSEN.2008.2011070

• AlGaN/GaN heterostructure
• multi-MgxNy/GaN buffer
• Schottky barrier photodetector

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlCaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the mtilti-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

• 出版日期2009-2
• 单位中央民族大学