Abnormal Cu3Sn Growth and Kirkendall Formation Between Sn and (111) and (220) Preferred-Orientation Cu Substrates

作者：Huang T S^*; Tseng H W; Hsiao Y H; Cheng C H; Lu C T; Liu C Y

来源：Electrochemical and Solid-State Letters, 2011, 14(10): H393-H396.

DOI：10.1149/1.3608248

(111) and (220) preferred-orientation Cu substrates were successfully produced by varying electroplating current-density. While these preferred-orientation Cu substrates reacted with Sn, serious Kirkendall voids formed at the interfaces between Sn and (111) and (220) preferred-orientation Cu substrates. Also, abnormal Cu3Sn growth occurs; the Cu3Sn layer decreased upon aging and vanished after 1000-h aging. With a prolonged 2000-h aging, a Cu3Sn layer re-grew at the Cu6Sn5/Cu interface.

• 出版日期2011
• 单位中央民族大学