Accelerated formation of the boron-oxygen complex in p-type Czochralski silicon

作者：Hamer Phillip^*; Hallam Brett; Abbott Malcolm; Wenham Stuart

来源：Physica Status Solidi-Rapid Research Letters, 2015, 9(5): 297-300.

DOI：10.1002/pssr.201510064

• boron
• light induced degradation
• defects
• crystals
• silicon

This Letter reports on the acceleration of the rate of formation of the boron-oxygen defect in p-type Czochralski silicon with illumination intensities in excess of 2.1 x 10(17) photons/cm(2)/s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 x 10(19) photons/cm(2)/s is shown to result in near-complete defect formation within seconds.

• 出版日期2015-5