Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

作者：Huang Chun Ying^*; Lee Ya Ju; Lin Tai Yuan; Chang Shao Lun; Lian Jan Tian; Lin Hsiu Mei; Chen Nie Chuan; Yang Ying Jay

来源：Optics Letters, 2014, 39(4): 805-808.

DOI：10.1364/OL.39.000805

In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73 x 10(17) cm(-3), a high mobility of 210 cm(2)/Vs, and a low resistivity of 0.079 Omega cm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

• 出版日期2014-2-15
• 单位长春大学; 中国科学院电工研究所