科研之友
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摘要
Current characteristic has not been detailed, analyzed, and modeled in conventional High-electron-mobility transistor field-effect transistor model, which is not accuracy enough because the current has different variation rules under different gate voltages. A novel approach for the modeling of high-electron-mobility transistor high power amplifier is proposed in this paper. In order to obtain a more accuracy nonlinear model, drain current database are divided into three different regions, including the high gate bias region, the middle gate bias region, and the approximate pinch-off regions. The three nonlinear current regions are modeled separately and implemented in final high-electron-mobility transistor field-effect transistor model based on support vector regression algorithm. The proposed model is validated with high accuracy by comparing the simulated data with the tested data of a high power gallium nitride high-electron-mobility transistor amplifier, which the modeling is based on fewer samples compared with conventional methods based on the integrated current model.
- 出版日期2017-2
- 单位合肥工业大学
