A series peaked gm-boosted 3.1-10.6 GHz CMOS CG UWB LNA for WiMedia

作者：Khurram Muhammad; Hasan S M Rezaul^*

来源：Microwave and Optical Technology Letters, 2012, 54(2): 532-535.

DOI：10.1002/mop.26573

• ultrawideband
• radio frequency
• CMOS
• low power
• low noise amplifier

An improved low noise amplifier (LNA) architecture is presented for WiMedia ultrawideband radio frequency frontend. The LNA topology addresses the issue of noise reduction keeping the power consumption to a minimum by employing the transconductance %26quot;g(m)%26quot; boosted common gate (CG) LNA topology with series peaking, operating in the WiMedia spectrum. This CG LNA utilizes an active g(m)-boosting stage where the bias current is shared between the g(m)-boosting stage and the self-biased CG amplifying stage. In conjunction with an LC T-network to further reduce the noise figure (NF) of the CG stage with finite output conductance (g(ds)), inductive series peaking is used to widen the operating pass-band. The proposed LNA is designed using the 130 nm IBM CMOS process and achieved an input return loss (S-11) and an output return loss (S-22) of -10 dB and -14 dB, respectively. The LNA exhibits forward power gain (S-21) of around 14 dB with a NF ranging between 3.5 and 4.1 dB. The complete chip dissipates 5 mW from a 1.0 V supply with an input referred third order intercept point (IIP3) and an input referred 1-dB compression point (ICP1dB) of -4.8 dBm and -12.1 dBm, respectively.

• 出版日期2012-2