A 474 GHz HBV Frequency Quintupler Integrated on a 20 mu m Thick Silicon Substrate

作者：Malko Aleksandra^*; Bryllert Tomas; Vukusic Josip; Stake Jan

来源：IEEE Transactions on Terahertz Science and Technology, 2015, 5(1): 85-91.

DOI：10.1109/TTHZ.2014.2378793

• Compound semiconductors
• epitaxial transfer
• frequency multipliers
• heterostructure barrier varactors
• monolithic integrated circuits
• sub-microwave diodes
• submillimetre wave
• THz sources
• wafer bonding

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (x5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 mu m) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.

• 出版日期2015-1