Annealing Effect on the Physical Properties of La0.7Sr0.3MnO3 Thin Films Grown on Si Substrates Prepared by Chemical Solution Deposition Method

作者:Cao, Danyan; Zhang, Yuanyuan*; Yang, Jing; Bai, Wei; Chen, Ying; Wang, Genshui; Dong, Xianlin; Tang, Xiaodong
来源:Ferroelectrics, 2016, 491(1): 143-148.
DOI:10.1080/00150193.2015.1073096

摘要

The LSMO films were prepared on Si substrates by chemical solution deposition method. The films were annealing in air and O-2 atmosphere. All films have perfectly crystallized. Compared with the LSMO films annealing in air, the residual and saturation magnetic moment value were much lower for the films annealing in O-2. The T-c of the LSMO films annealing in O-2 is higher about 15 K than that annealing in air. The variation of magnetization and Tc with annealing in O-2 is thus consistent with the change of Sr content and is almost certainly related to the Mn3+/Mn4+ ratio. The MR value is decreased with the increasing temperature. It is observed that the transport properties, both the resistivity and the magnetoresistance value, have similar variation behavior. It is because that the La(Sr) vacancies (delta > 0) are expected to have indirect perturb the conduction path. The resistivity and the MR value at 7 T of the both films are 0.145 Omega.cm, 59.3%), 0.208 Omega.cm, 60.0%), respectively.

全文