Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

作者：Shin Hyun Wook; Lee Sang Jun; Kim Doo Gun; Bae Myung Ho; Heo Jaeyeong; Choi Kyoung Jin; Choi Won Jun; Choe Jeong woo; Shin Jae Cheol^*

来源：Scientific Reports, 2015, 5(1): 10764.

DOI：10.1038/srep10764

One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

• 出版日期2015-6-2