A novel low-temperature synthetic route to crystalline Si3N4

作者：Tang KB^*; Hu JQ; Lu QY; Xie Y; Zhu JS; Qian YT

来源：Advanced Materials, 1999, 11(8): 653-+.

DOI：10.1002/(SICI)1521-4095(199906)11:8<653::AID-ADMA653>3.0.CO;2-E

Communication: A low-temperature preparation of crystalline Si3N4 is described that avoids the temperatures above 1200 degrees C necessary in other methods. Si(3)N(4)s chemical stability, high-temperature strength, and excellent creep resistance make it a promising Fe material for high-temperature engineering applications. The Figure shows a transmission electron microscopy image of a Si3N4 sample.

• 出版日期1999-6-2
• 单位中国科学技术大学