Field-effect transistor-based solution-processed colloidal quantum dot photodetector with broad bandwidth into near-infrared region

作者：Yang, Shengyi^*; Zhao, Na; Zhang, Li; Zhong, Haizheng; Liu, Ruibin; Zou, Bingsuo

来源：Nanotechnology, 2012, 23(25): 255203.

DOI：10.1088/0957-4484/23/25/255203

• PHOTOVOLTAIC CELLS
• CHARGE-SEPARATION
• EMITTING-DIODES
• SOLAR-CELLS
• POLYMER
• PHOTOCONDUCTIVITY
• RECOMBINATION
• BLENDS

We demonstrate a solution-processed colloidal quantum dot (CQDs) photodetector with the configuration of a field-effect transistor (FET), in which the drain and source electrodes are fabricated by a shadow mask. By blending PbS CQDs into the hybrid blend, poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C-61-butyric acid methylester (PCBM), the photosensitive spectrum of the nanocomposite blend is extended into the near-infrared region. A FET-based photodetector ITO/PMMA (180 nm)/P3HT:PCBM:PbS (110 nm)/Al, in which PMMA (polymethylmethacrylate) acts as the dielectric layer and P3HT:PCBM:PbS (in weight ratio of 1:1:1) as the active layer, shows a broad spectral bandwidth, a responsivity of 0.391 mA W-1 and a specific detectivity of 1.31 x 10(11) Jones are obtained at V-GS = 1 V under 600 nm illumination with an intensity of 30 mu W cm(-2). Therefore, it provides an easy way to fabricate such a FET-based photodetector with a channel length of some hundreds of micrometers by a shadow mask.

• 出版日期2012-6-29
• 单位北京理工大学