摘要

In this letter, we developed a high-performance electrolyte-insulator-semiconductor (EIS) sensor using a high-k CeO2 sensing membrane, which was deposited on a Si substrate through sputtering. We used X-ray diffraction and X-ray photoelectron spectroscopy to study the structural properties of these films that were annealed at various temperatures. The CeO2 EIS sensor annealed at 900 degrees C exhibited a higher sensitivity of 64.8 mV/pH, lower hysteresis voltage of 1 mV, and smaller drift rate of 0.78 mV/h compared with other annealing temperatures, presumably suggesting the formation of a well-crystallized CeO2 film featuring a high dielectric constant and having a high fraction of Ce3+.

  • 出版日期2015-11
  • 单位长春大学